Apparatus and process for producing single crystal

摘要

The outer vessel (1) holds a rotating crucible (2), molten Si (3), which contains doping elements of Sb or As, devices (4) to pull and rotate the growing monocrystal (5) from the Si melt (3) that is contained in a concentric, tube or cone-shaped protection housing (6). There is a gap between the surface of the Si melt (10) and the end of the housing (9) of 5-50 mm to allow the passage of inert gas. The inert gas passes through slits (12) in the protection shield (6), across the surface of the melt (10), around the outside of the crucible and stationary inner part to the exhaust-suction opening (11). The inert gas controls the O2 concn. in the monocrystal. Eight examples of cone and tube-shaped protection housings are shown.