| 摘要 |
<p>A semiconductor device of which the hysteresis characteristics of the ferroelectric material are deteriorated little and which has a high reliability even under highly humid conditions, and a method of producing the same. A dense passivation film (42) of silicon nitride is formed to cover a ferroelectric capacitor Cf and prevent moisture from entering from the outside. The volume percentages of SiH4, and NH3 contained in the hydrogen-containing gas for forming the passivation film (42) are so low that the concentration of hydrogen in the passivation film (42) may be low. An upper electrode (36) of the ferroelectric capacitor Cf has a two-layer structure formed of an IrO2 film and an Ir film deposited in this order. Therefore, hydrogen generates little during the process of forming the film, and hydrogen contained in the passivation film (42) is little after the film is formed. Moreover, hydrogen is prevented to some extent from arriving at the ferroelectric layer (34). This suppresses the deterioration of the hysterisis characteristics of the ferroelectric capacitor Cf caused by hydrogen.</p> |
