THIN FILM TRANSISTOR, ITS MANUFACTURE, AND LIQUID CRYSTAL DISPLAY MOUNTING IT THEREON

摘要

PROBLEM TO BE SOLVED: To so manufacture a self-aligning type TFT with a parasitic capacity reduced by eliminating completely the overlapping portion of its gate electrode with its source and drain electrodes, that the number of its photorithographic processes using masks is made equal to the manufacture of a conventional channel-protecting film type TFT. SOLUTION: In the formation of a channel protecting film type TFT, so forming a mask 9 for etching a metallic film 7 constituting source and drain electrodes 10, 11 as to have the overlapping portion with a channel protecting film 5, the middle portion of the metallic film 7 present below the mask 9 is removed by side-etching to form the source and drain electrodes 10, 11 having no overlapping portion with the channel protecting film 5. Thereafter, without removing the mask 9 therefrom, removing by dry-etching the portions of a contact portion 6 and a semiconductor layer 4, etc., which are present in the peripheries of the source and drain electrodes 10, 11, the source and drain electrodes 10, 11 are separated electrically from each other.