Integrated semiconductor switching arrangement and Zener diode e.g. for IC voltage regulator

摘要

The arrangement involves an integrated semiconductor switching device, which has, alongside PMOS- and NMOS-transistors, zapping-Z-diodes i.e. burn-through diodes, and a Zener diode with a low breakthrough voltage. The anode region (21) and the cathode region (22) on the ground region of a semiconductor substrate (1) has the same characteristic data as the source region (4) and the drain region (5) of a PMOS-transistor. A cathode region is overlaid partially on the ground area of the semiconductor substrate by the anode region, so that the cathode region displays the same characteristic data as the source region (12) and the drain region (13) of an NMOS-transistor. The cathode region and anode region form a Zener diode. The Zener diode can be short-circuited through a high current flow i.e. burned through, or be used as a voltage regulator.