发明名称 Method of rough polishing semiconductor wafers to reduce surface roughness.
摘要 A method of rough polishing a semiconductor wafer to reduce roughness on a surface of the wafer prior to finish polishing the wafer by applying a polishing solution to a polishing material, contacting the polishing material and the polishing solution with the surface of the wafer as the wafer moves relative to the polishing material to reduce low frequency surface roughness of the wafer, applying a second polishing solution to the polishing material, and contacting the polishing material and the second polishing solution with the surface of the wafer as the wafer moves relative to the polishing material to further reduce the low frequency surface roughness, wherein the wafer has an average surface roughness not greater than 1.0 nm Ra, as measured on a 1 mm X 1 mm scan with an optical interferometer, after being rough polished. <IMAGE>
申请公布号 EP0684634(A3) 申请公布日期 1998.11.11
申请号 EP19950303105 申请日期 1995.05.04
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 KRISHNA, VEPA;ILLIG, LOIS;WISNIESKI, MICHAEL S.
分类号 B24B37/00;H01L21/304;H01L21/306 主分类号 B24B37/00
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