Argon amorphizing polysilicon layer fabrication

摘要

A polycrystalline silicon (polysilicon) layer is fabricated by forming a polysilicon layer on a substrate, implanting argon into the polysilicon layer to selectively amorphize the polysilicon layer and recrystallizing the selectively amorphized polysilicon layer. The argon dosage and energy may be controlled so that the argon passes through the polysilicon layer into the substrate so that argon ions do not disturb recrystallization. By using argon amorphizing, excessive heating of the substrate during implantation is prevented and ion implanter contamination from conventional silicon implantation is prevented.