Deep trench cell capacitor with inverting counter electrode
摘要
The preferred embodiment provides an integrated circuit capacitor that achieves a high capacitance by using an inversion layer in the substrate as the plate counter electrode for the capacitor. The inversion layer is created by forming a trench capacitor in a lightly doped substrate. With a sufficient workfunction difference between the storage node material and the isolation band the surface of the lightly doped substrate inverts, with the inversion charge being supplied by the isolation band. This inversion layer serves as the plate counter electrode for the capacitor.
申请公布号
US5793075(A)
申请公布日期
1998.08.11
申请号
US19960688345
申请日期
1996.07.30
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS COMPONENTS, INC.
发明人
ALSMEIER, JOHANN;MANDELMAN, JACK ALLAN;O'NEILL, JAMES ANTHONY;PARKS, CHRISTOPHER;PARRIES, PAUL CHRISTIAN