Method for providing isolation between semiconductor devices using epitaxial growth and polishing

摘要

A method for isolation between semiconductor devices includes the steps of: forming sequentially a first oxide film and silicon nitride layer on a silicon substrate; forming a first photoresist pattern on the nitride layer where field oxide is not to be formed; etching the exposed nitride to predetermined depth; stripping the first photoresist film; oxidizing the resultant wafer of the above step until a second oxide grows on the etched silicon substrate and extends itself from the region of the patterned nitride and first oxide layer to a predetermined outward distance; forming a second photoresist film at the portions excepting the surface of the nitride layer; etching the nitride layer, the first oxide layer and a portion of second oxide positioned at the vertical downward direction under the first oxide; stripping the second photoresist film, growing epitaxially the exposed portion of the etched silicon substrate; depositing an insulating layer on the resultant structure of the above step and polishing the deposited insulating layer until the epitaxial layer is exposed.