发明名称 |
PHOTOLEITENDE SCHICHTEN |
摘要 |
<p>A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.</p> |
申请公布号 |
DE2616148(A1) |
申请公布日期 |
1976.10.28 |
申请号 |
DE19762616148 |
申请日期 |
1976.04.13 |
申请人 |
NIPPON HOSO KYOKAI;HITACHI,LTD. |
发明人 |
SHIDARA,KEIICHI;GOTO,NAOHIRO;MARUYAMA,EIICHI;HIRAI,TADAAKI;FUJITA,TSUTOMU |
分类号 |
H01J29/45;H01L31/0248;(IPC1-7):G03G5/082 |
主分类号 |
H01J29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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