HIGH FREQUENCY LARGE POWER STATIC INDUCTION TYPE TRANSISTOR,申请号JP19800106734-传众专利搜索

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发明名称	HIGH FREQUENCY LARGE POWER STATIC INDUCTION TYPE TRANSISTOR
摘要	PURPOSE:To obtain a large power transistor capable of being used to high frequency by forming a groove extending to cross a gate layer having a depth reaching a gate layer in a source layer. CONSTITUTION:A groove 100 extending in a direction to cross a gate layer 3' having a depth reaching a gate 3' is formed at the center in a source layer 4, an aluminum film 9' is arranged along the bottom surface of the groove 100, and is connected to an aluminum electrode 9 for leading a gate lead wire. A P<+> type striped region is formed directly under the film 9'. Eventually, it is formed in a structure in which the source is divided into two segments, source aluminum electrodes 8, 8' are formed thereto, and aluminum is arranged on the P<+> type flat region at the peripheries of the aluminum electrodes.
申请公布号	JPS5732675(A)	申请公布日期	1982.02.22
申请号	JP19800106734	申请日期	1980.08.05
申请人	TOHOKU METAL IND LTD	发明人	TATSUTA MASATAKA;YAMANAKA EIJI
分类号	H01L29/80;H01L29/10;H01L29/772;(IPC1-7):01L29/80	主分类号	H01L29/80
代理机构		代理人
主权项
地址

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