发明名称 |
Electrostatic discharge protection device |
摘要 |
<p>An electrostatic discharge protection device and method decreases the latch-up susceptibility of an ESD structure by suppressing the injection of minority carriers that cause transistor action to occur. This is accomplished, for example, by using a metal contact to the n-substrate or n-well in place of or in parallel with the prior art p-diffusion. Using such metal contact forms a Schottky Barrier Diode (SBD) with the ESD structure. Since the SBD is a majority-carrier device, negligible minority carriers are injected when the SBD is in forward bias, thereby reducing the likelihood of latch-up. <IMAGE></p> |
申请公布号 |
EP0838857(A2) |
申请公布日期 |
1998.04.29 |
申请号 |
EP19970307763 |
申请日期 |
1997.10.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES;KABUSHIKI KAISHA TOSHIBA |
发明人 |
EL-KAREH, BADIH;RYAN, JAMES GARDNER;TANIMOTO, HIROYOSHI |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/092;H01L29/47;H01L29/872;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|