Method for fabricating an optoelectrical semiconductor device and a device or matrix of devices fabricated using said method

摘要

A process for manufacturing optoelectronic semiconductor components employs epitaxial deposition to deposit one or more materials, which crystallise with the gallium arsenide lattice parameter, on a crystalline sheet having the indium phosphide lattice parameter so as to form one or more metamorphic layers (43) arranged in series with the sheet on the functional optical path (A) of the component. Also claimed is an optoelectronic semiconductor component having the above structure. Further claimed is an optoelectronic semiconductor component matrix comprising (a) a crystalline sheet having the indium phosphide lattice parameter and having a mechanical strength lower than that required for the matrix; (b) metamorphic layers (43, M2) of materials which crystallise with the gallium arsenide lattice parameter, the layers being formed on the sheet and being arranged in series with the sheet on the functional optical path (A) of each component of the matrix; and (c) a support (50) which consists of a material different from those of the layers and the sheet and which has a mechanical strength greater than that of the sheet, the support being fixed directly to the layers (43) by fusion to impart the desired mechanical strength to the matrix.