| 摘要 |
An irradiation light (15) containing a light which wave length is not absorbed by the n-type clad layer (13), but is absorbed by the p-type active layer (12), is applied on the wafer for manufacturing light emitting elements with a double-hetero structure of a p-type clad layer (11), a p-type active layer (12) and an n-type clad layer (13) formed one after another on a semiconductor substrate (10). Defects are found by detecting the increased photoluminescent light due to generation of a conductivity-type inverted layer such as the n-type inverted layer (14). When the double-hetero structure is composed of a GaAlAs mixed crystal compound semiconductor, the irradiation light (15) which contains a wavelength range of 600-650 nm is applied. When the defective area is an active layer deficient area (17), detection is conducted by using the reflection light (18) from the surface of the semiconductor substrate (10). <IMAGE> |
