发明名称 |
Stress control by fluorination of silica film |
摘要 |
<p>A method and apparatus for controlling the intrinsic stress level of a deposited silicon oxide film. In one embodiment, the method includes incorporating a select amount of a halogen element into the film to obtain a resulting film having the desired stress level. In another embodiment, the method of the present invention includes the step of tuning the stress level of a silicon oxide film deposited under high density plasma conditions by incorporating a predetermined amount of fluorine into the film. <IMAGE></p> |
申请公布号 |
EP0822585(A2) |
申请公布日期 |
1998.02.04 |
申请号 |
EP19970112628 |
申请日期 |
1997.07.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NOWAK, ROMAULD;VERNA, AMRITA;PICKERING, JONATHAN C.;ROBLES, STUARDO;SINHA, ASHOK |
分类号 |
H01L21/205;C23C16/40;H01L21/31;H01L21/316;(IPC1-7):H01L21/316;H01L23/485 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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