| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a storage capacitor eliminating the necessity of a conventional storage capacitor electrode by integrating a dark matrix on an active matrix array. SOLUTION: An array is formed and a dark matrix 54 for a cell is overlapped to a cell electrode 62 on the array, so that a dielectric layer 66 formed in an overlap area 60 forms a storage capacitor. The dark matrix 54 of each cell is overlapped to the whole periphery of the cell electrode 62, an overlap area between the dark matrix 54 and the cell electrode 62 is sufficiently wide and the dielectric layer 52 between the dark matrix 54 and the cell electrode 62 is sufficiently thin, so that the formed storage capacitor satisfies the request of the cell.</p> |
