Method for selective depositing of refractory metal silicide on silicon and silicon wafer metallized by this process

摘要

The Silicon semiconductor metallisation process has a surface preparation step where a thin layer of silicon oxygen nitride of around 1 nm thick is formed on the silicon substrate. The oxidation of the sub-nanometric layer to the silicon oxide is followed by the nitration of that oxide layer by the deposition of a nitrous oxide or dioxide atmosphere. The oxidation is carried out through exposing the surface to an atmosphere of ozone at a pressure equal to atmospheric or less at a temperature between 20 and 200 degrees C. The oxidation process lasts between two and ten minutes. The nitration is carried out at a temperature of between 700 and 900 degrees C. In a second step, selective vapour phase deposition of the refractive metal is carried out providing the metallic contacts.