发明名称 SUBSTRATE PROCESSING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a substrate processing device which is capable of making a substrate uniform in temperature in a short time and processing it so as to meet its properties. SOLUTION: A substrate processing device processes a substrate S through such manner that the substrate S is placed on a substrate holder 20 arranged in a processing chamber 1, and gas is introduced into the processing chamber 1 to process the substrate S as the substrate S is kept at a prescribed temperature, wherein a holding mechanism 53 which brings the periphery of the wafer S into thermally uniform contact with the substrate holder 20 is provided inside the processing device, and the substrate S can be made uniform in temperature in a short time.</p>
申请公布号 JPH0997764(A) 申请公布日期 1997.04.08
申请号 JP19950253294 申请日期 1995.09.29
申请人 TOSHIBA CORP 发明人 SASAKI TOMIYA;SATO HIROSUKE;TAKASE TOSHIAKI
分类号 C30B25/12;C23C16/44;C23C16/458;C23C16/46;H01L21/205;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/205;H01L21/306 主分类号 C30B25/12
代理机构 代理人
主权项
地址