| 摘要 |
A projection exposure apparatus includes an illumination system for illuminating a mask, on which a pattern to be transferred is formed, with exposure light, a projection optical system for imaging and projecting the pattern on the mask onto a photosensitive substrate, beam radiation means for radiating an alignment beam with a wavelength different from the wavelength of the exposure light toward a first grating mark formed on the mask and a transparent portion near the first grating mark, and radiating the alignment beam onto a second grating mark formed on the photosensitive substrate via the transparent portion and the projection optical system, the beam radiation means having a four-beam generation member for generating two first alignment beams which cross each other on the first grating mark, and two second alignment beams which cross each other in a space separated by a predetermined distance from the surface of the mask.
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