| 摘要 |
PURPOSE: To realize a compact, high-reliability power semiconductor device by constituting a device with a resin mold in one united body in a power semiconductor device having a construction of protecting a circuit system with a resin-based mold. CONSTITUTION: An insulating substrate is produced by thermally bonding together under pressure an epoxy-based insulating layer 14 on the surface of one side of a metal base substrate 15. A copper conductor layer is formed on the isulating layer 14, etching removal is selectively performed, and a conductor pattern 13 having a predetermined shape is formed. On the other hand, a power semiconductor element 11 is jointed on a heat spreader consisting of copper chips by using high-temperature solder 21. This jointing member is fixed with low-temperature solder 20 on the conductor pattern 13 prepared in advance. At this time, other chip parts may be jointed at the same time. A series of circuits thus prepared are set in metal molds set to a predetermined temperature, and a resin mold 18 is molded in one united body, thereby obtaining a compact, high-performance power semiconductor device. |
