发明名称 |
VAPOUR PHASE CHEMICAL INFILTRATION PROCESS FOR DENSIFYING POROUS SUBSTRATES DISPOSED IN ANNULAR STACKS |
摘要 |
The invention concerns a vapour phase chemical infiltration process for densifying porous substrates arranged in annular stacks. The substrates (12) to be densified are loaded into the reaction chamber (11) of an infiltration furnace such that they are arranged in at least one annular stack (30) which delimits an internal passage (31) with spaces (33) between the substrates. On leaving a pre-heating region (18), the gaseous phase introduced into the reaction chamber is directed towards one of the two spaces formed by the interior and exterior of the substrate stack or stacks, preferably the smallest space. This space (31) is closed at its opposite end such that, between its introduction into the chamber and discharge therefrom, the gaseous phase circulates from the interior to the exterior of the or each stack or conversely, the gaseous phase passing through the spaces between substrates and being diffused inside the latter. |
申请公布号 |
WO9633295(A1) |
申请公布日期 |
1996.10.24 |
申请号 |
WO1996FR00582 |
申请日期 |
1996.04.17 |
申请人 |
SOCIETE EUROPEENNE DE PROPULSION;CHRISTIN, FRANCOIS;DAUBIGNY, PIERRE;DELAURENS, PIERRE;LELUAN, JEAN-LUC |
发明人 |
CHRISTIN, FRANCOIS;DAUBIGNY, PIERRE;DELAURENS, PIERRE;LELUAN, JEAN-LUC |
分类号 |
C23C16/44;C23C16/04;C23C16/455;C23C16/458 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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