WIRE WIDTH MEASUREMENT PHOTO MASK OF SEMICONDUCTOR DEVICE

摘要

The photomask includes an upper auxiliary pattern(20) of a plurality of the first auxiliary pattern(10) with a finite interval, and a lower auxiliary pattern(30) of a plurality of the second auxiliary pattern(10') having the first auxiliary pattern(10) with a finite interval of same size. The interval of the second auxiliary patterns(10') is different from that of the first auxiliary patterns(10). The upper auxiliary patterns(20) are close to the lower auxiliary patterns(30).