| 摘要 |
<p>A method of making an LED from a double heterostructure wafer (51) having p- and n-surfaces, and n-layer comprises etching a groove (60) in the p-surface (53) parallel to the prim. crystallographic plane to expose the n-layer (52). A metal n-contact (62) is formed in the groove up to the p surface and a metal p-contact (63) formed on the p surface opposite the groove from the n-contact. A dielectric film (65) is deposited overall, opening to expose the contacts made, and a metal film deposited (80). Bonding pads are defined and formed over the contacts (120,121) and metal film around the pads removed to expose the dielectric. Also claimed is a method as above simply claiming etching a groove, forming n- and p-contacts, depositing the dielectric, and forming the bonding pads.</p> |
