发明名称 METHOD OF FORMING METALLIZED LAYER ON ALUMINUM NITRIDE BASE MATERIAL
摘要 An aluminum nitride base material is prepared from either an aluminum nitride compact or an aluminum nitride sintered body which is previously formed to have a prescribed configuration. A high melting metal paste is then prepared which contains at least 1 percent by weight and not more than 40 percent by weight of at least one oxide selected from the group comprising A?2O3, SiO2, CaO and Y2O3, at least 0.01 percent by weight and not more than 1.0 percent by weight of at least one iron family metal, and a high melting metal. The high melting metal is composed of tungsten and molybdenum, with a weight ratio of tungsten to molybdenum (W/Mo) of at least 1/1 and not more than 1000/1. The high melting metal paste is applied onto a surface of the aluminum nitride base material. The aluminum nitride base material thus coated with the high melting metal paste is heated/fired to a temperature of at least 1400.degree.C and not more than 2000.degree.C, whereby to form a metallized layer on the surface of the aluminum nitride base material.
申请公布号 CA2044508(C) 申请公布日期 1996.06.25
申请号 CA19912044508 申请日期 1991.06.13
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 YAMAKAWA, AKIRA;OGASA, NOBUO
分类号 C04B35/581;C04B41/51;C04B41/88;H05K1/09;(IPC1-7):C04B41/85;B05D3/02 主分类号 C04B35/581
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