| 摘要 |
A system for processing a workpiece (5) in a plasma comprises enclosure (11) defining a vacuum processing chamber (16), electrode means (25, 32c) for coupling AC electrical energy into the chamber to generate a plasma in the gas. High frequency VHF/UHF electrical energy is applied to the electrode means (25, 32c) to control the density of the plasma and relatively lower frequency AC electrical energy is applied to the electrode means to control the sheath voltage appreciated with the electrode means and plasma ion energy. The electrode means preferably comprises two electrode structures for applying the high frequency AC electrical energy to the chamber. <IMAGE>
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