| 摘要 |
The method includes the steps of forming a first storage node(10) on the source(8') of a MOS transistor formed on a semiconductor substrate(1); forming an insulating layer on the substrate and selectively etching it to expose a portion of the first storage node(10); forming a second storage node layer(18) on the substrate, forming a sacrifice insulating layer(19) thereon, and a conductive spacer(28) on the sacrifice insulating layer, anisotropic-etching the sacrifice insulating layer by using the conductive spacer as a mask; forming a third storage node layer(22) on the overall surface of the substrate; removing the remaining sacrifice insulating layer(28) to form a cavity; and patterning the second and third storage node layers, thereby forming a storage node consisting of the first, second and third storage node layers.
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