| 发明名称 |
Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride |
| 摘要 |
<p>By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.</p> |
| 申请公布号 |
EP0420595(B1) |
申请公布日期 |
1996.05.01 |
| 申请号 |
EP19900310506 |
申请日期 |
1990.09.25 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MIKOSHIBA, NOBUO;TSUBOUCHI, KAZUO;MASU, KAZUYA |
| 分类号 |
C23C16/20;C23C14/34;C23C16/02;C23C16/04;C23C16/18;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;(IPC1-7):H01L21/285;H01L21/768;H01L21/320 |
主分类号 |
C23C16/20 |
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