发明名称 |
Compound semiconductor, a method for producing a thin film thereof, and a semiconductor device having the thin film |
摘要 |
Chalcopyrite compound semiconductor thin films represented by I-III-VI2-xVx or I-III-VI2-xVIIx, and semiconductor devices having a I-III-VI2/I-III-VI2-xVx or I-III-VI2/I-III-VI2-xVIIx chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.
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申请公布号 |
US5506426(A) |
申请公布日期 |
1996.04.09 |
申请号 |
US19930061491 |
申请日期 |
1993.05.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOHIKI, SHIGEMI;NEGAMI, TAKAYUKI;NISHITANI, MIKIHIKO;WADA, TAKAHIRO |
分类号 |
C01B19/04;C01G1/00;H01L21/203;H01L31/032;H01L31/04;H01L31/068;H01L31/10;(IPC1-7):H01L29/18;H01L31/103;H01L31/033 |
主分类号 |
C01B19/04 |
代理机构 |
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