| 摘要 |
<p>PURPOSE: To improve the yield of fabrication of a TFT-liquid crystal display wherein a gate insulating layer 4 of a getting-over part to a gate electrode 2 can be prevented from cracking and shorting between the gate electrode 2 and a drain electrode 4 can be reduced. CONSTITUTION: There is provided a semiconductor device which includes a semiconductor pattern composed of a gate electrode 2, a gate insulating layer 4, and a semiconductor layer 5 on an insulating substrate 1, and further includes source and drain electrodes 8 formed to intersect the gate electrode 2 in the semiconductor pattern region. In the semiconductor device there are formed the gate electrode 2 where an electrode end is substantially tapered and the semiconductor pattern formed thereon where its end part is substantially tapered. Accordingly, a substantial tapering angleθg of the gate electrode is three time the substantial tapering angleθs . of the semiconductor pattern end or smaller(but, it should be less than 90 degree.).</p> |
