| 摘要 |
<p>A new process has been developed to achieve a very low silicon dioxide/silicon interface state density Dit, low recombination velocity S (∫ 2 cm/s), and high effective carrier lifetime Teff (⊃ 5 ms) for oxides deposited on silicon substrates at low temperature. The technique involves direct plasma-enhanced chemical vapor deposition (PECVD), with appropriate growth conditions, followed by a photo-assisted rapid thermal annealing (RTA) process.</p> |
