| 发明名称 |
II-VI COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURE OF IT |
| 摘要 |
PURPOSE:To realize a blue light emitting element having a low operating voltage by providing low contact resistance electrodes. CONSTITUTION:The title II-VI compound semiconductor device has a p-type ZnxMg1-xSySe1-y (0<=x<=1, 0<=y<=1) semiconductor layer, and an electrode layer is formed on the semiconductor layer putting at least a metal nitride layer in between. |
| 申请公布号 |
JPH07263751(A) |
申请公布日期 |
1995.10.13 |
| 申请号 |
JP19940053588 |
申请日期 |
1994.03.24 |
| 申请人 |
SHARP CORP |
发明人 |
MURAKAMI MASANORI;KOIDE YASUO;TERAGUCHI NOBUAKI;TOMOMURA YOSHITAKA |
| 分类号 |
H01L29/43;H01L21/28;H01L21/4763;H01L29/221;H01L29/45;H01L33/28;H01L33/30;H01L33/38;H01L33/40;H01S5/00;H01S5/042;H01S5/30;H01S5/327 |
主分类号 |
H01L29/43 |
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