| 摘要 |
PURPOSE:To provide a method by which elemental analysis can be made on a very small area on a semiconductor device. CONSTITUTION:The conductive film 17 of a semiconductor device is etched off by dipping the device in phosphoric acid (H3PO4) maintained at 60 deg.C. Then a barrier metal 15 is etched off by dipping the device in a hydrogen peroxide solution (H2O2) maintained at 80 deg.C. Thereafter, the device is dipped in a mixed solution containing hydrofluoric acid (HF) as a wet etchant. As a result, polycrystalline silicon 16 is separated from an interlayer insulating film 13. After separating the silicon 16, an area to be analyzed on the device is irradiated with an electron beam 18 by using an electron probe microanalyzer (EPMA) as an analyzer. |
