发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To provide excellent dimensional accuracy of a viahole of a polyimide resin film and to accurately expose a surface of an Al bonding pad by increasing the shape and the size of the viahole in a second polyimide resin film larger than those of a viahole in a first polyimide resin film layer. CONSTITUTION:The shape and the size of a viahole in a second polyimide resin film 6 is controlled by regulating the developing and etching times with alkaline aqueous solution to be larger than those of a first layer viahole 5. Then, using the obtained first and second polyimide resin films 4, 6 as mask materials, an inorganic insulating layer 3 of an upper part of an Al bonding pad 2 of a wiring layer is dry-etched by using mixed gas of fluorine, and the pad 2 is exposed. An exposed part 7 is formed in shape smaller than that of the pad of the layer 2, thereby obtaining a moisture resistant reliability of a semiconductor device using it.</p>
申请公布号 JPH07183296(A) 申请公布日期 1995.07.21
申请号 JP19930323952 申请日期 1993.12.22
申请人 HITACHI CHEM CO LTD 发明人 SEKINE HIROYOSHI
分类号 C09D179/08;H01L21/28;H01L21/312;H01L21/3205;H01L23/52;(IPC1-7):H01L21/320 主分类号 C09D179/08
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