FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of forming an insulating film (12) on a silicon substrate (11) to etch the film (12) to form a contact to form a first glue layer (13) thereon, forming a first metal layer (14) thereon to form a second glue layer (15) thereon, depositing an Al layer (16) on the layer (15) by sputtering, forming an insulating film (17) on the layer (16) to etch the film (17) to form a via contact to expose the film (14), filling the via contact with a selective tungsten film (18), and forming a metal layer thereon to pattern the metal layer, thereby forming the metal lines of sandwich structure to improve the contact resistance.