| 摘要 |
PURPOSE:To provide a dielectric thin film, by which leak current between both electrodes putting the dielectric thin layer between them and electric fatigue due to a repeat are reduced and an excellent electric characteristic is provided, by forming the dielectric thin film of erbium lead zirconate titanate as a new material. CONSTITUTION:A surface of a n-type silicon base board 1 is thermally oxidized, and a thermal oxidation silicon film 2 with film thickness of 2000Angstrom is formed, and on this silicon film 2, a Ti film 3 with film thickness of 300Angstrom and a Pt lower electrode 4 with film thickness of 2000Angstrom are formed in order by a sputtering method, and then, an erbium lead zirconate titanate [(Pb1-yEry)(ZrxTi1-x)O3], (0<x<1, 0<y<1) thin film 5 with thickness of 2000Angstrom is formed on them by a sol-gel method. In addition, the surface of lead erbium zirconate titanate (PEZT) is treated by an annealing process by an ultraviolet ray, and then, a Pt upper electrode 6 is formed on it, and consequently, a dielectric thin film element with excellent characteristics is produced. |
