发明名称 CMOS circuit having increased voltage rating
摘要 Circuit for increasing the voltage rating of a CMOS circuit which contains at least a first and at least a second partial circuit (3, 5), the operating potentials of which are different and which are coupled to one another via a first and a second circuit node (k1, k2). In order to limit the voltage, use is made of a cascade circuit between the first and second circuit nodes (k1, k2), having at least one p-channel transistor (t) the gate connection (G) of which is supplied with a fixed potential (HV) and the well connection (W) of which is approximately at the corresponding source potential (Figure 3). <IMAGE>
申请公布号 DE4334513(C1) 申请公布日期 1994.10.20
申请号 DE19934334513 申请日期 1993.10.09
申请人 DEUTSCHE ITT INDUSTRIES GMBH, 79108 FREIBURG, DE 发明人 BLOSFELD, LOTHAR, DIPL.-PHYS., 79874 BREITNAU, DE;THEUS, ULRICH, DR.-ING., 79194 GUNDELFINGEN, DE;MOTZ, MARIO, DIPL.-ING., 79346 ENDINGEN, DE
分类号 H01L27/04;H01L21/822;H01L21/8238;H01L27/02;H01L27/092;H03K17/0814;H03K17/10;(IPC1-7):H01L23/58;H01L27/22 主分类号 H01L27/04
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