发明名称 |
Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine |
摘要 |
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.
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申请公布号 |
US5354708(A) |
申请公布日期 |
1994.10.11 |
申请号 |
US19930091634 |
申请日期 |
1993.07.14 |
申请人 |
TASKAR, NIKHIL R.;KHAN, BABAR A.;DORMAN, DONALD R. |
发明人 |
TASKAR, NIKHIL R.;KHAN, BABAR A.;DORMAN, DONALD R. |
分类号 |
C30B29/48;C23C16/18;C30B25/02;C30B25/10;H01L21/205;H01L21/365;(IPC1-7):H01L21/20 |
主分类号 |
C30B29/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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