| 摘要 |
A semiconductor device includes a MISFET which has a gate polysilicon between source and drain regions, the gate polysilicon being covered with a gate insulator film. The gate polysilicon with the gate insulator film thereon has a protruded curved bottom portion extending in the substrate direction. The source and drain regions have their respective bottom surfaces located above the location where the bottom of the gate insulator film is most protruded toward the substrate. At least the drain region has in the vicinity of the protruded bottom portion of the gate polysilicon, a sidewall portion having a bottom portion projecting laterally towards the protruded portion of the gate polysilicon and an upper portion bent into a concave shape to form a pocket between that upper portion and the gate insulator film.
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