| 摘要 |
PURPOSE:To provide a production method of a silicon thin plate with good productivity and lower production cost. CONSTITUTION:A crystalline silicon thin plate 80 is produced by cooling the interface of a silicon liquid in a crucible 40 and a gas phase to precipitate silicon in the interface. The silicon liquid is obtd. by melting a silicon plate 80 in a flux selected from indium, tin and gallium. Compared to the conventional method using a silicon liquid obtd. by melting silicon, it is not necessary for this method to maintain the silicon higher than its melting point so that the process temp. during the production of silicon thin plate can be decreased. Thereby, inexpensive constitutional parts can be used and the energy used for the production can be decreased. |
