PROCESS FOR THE MANUFACTURE, INCLUDING PACKAGING, OF AN ISFET-TYPE SENSOR AND SENSOR SO OBTAINED

摘要

Integrated electrochemical sensor of the type comprising, in a semi-conductor substrate (A) of a generally elongate shape, according to a direction (X-X'): at least one field effect transistor having a drain region (1), a source region (2) and a grid region (3) which is selective to an ionic species to be assayed; drain, source and substrate pads arranged in a localized area (Z) on the substrate on the other side of an area (Z') comprising regions (1-3) of the transistor; electric contacts (51, 52) connected to the drain (71) and source (72) connection pads respectively by means of conducting tracks (6) provided in substrate (A). According to the invention, the sensor is coated with a protective layer (8), with the exception of the connection pads (71-73) and the grid region (3).