发明名称 Formation of superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition
摘要 A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.
申请公布号 US5314866(A) 申请公布日期 1994.05.24
申请号 US19890352325 申请日期 1989.05.16
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 BERRY, ALAN D.;GASKILL, DAVID K.;HOLM, RONALD T.;CUKAUSKAS, EDWARD J.;KAPLAN, RAPHAEL;HENRY, RICHARD L.
分类号 C23C16/40;C23C16/56;H01L39/24;(IPC1-7):C23C16/00;B05D5/12 主分类号 C23C16/40
代理机构 代理人
主权项
地址