| 摘要 |
PURPOSE:To increase conductivity and to acquire an amorphous silicon thin film of a wide band gap. CONSTITUTION:An amorphous silicon thin film is manufactured by plasma CVD method by using SiH4 and N2O as source gas, or is manufactured using SiH4 and N2O as source gas in highly hydrogen-diluted SiH4 gas. Since N2O is added, photo conductivity is increased with the same optical band gap and a high quality a-Si:O:N:H thin film can be acquired. Furthermore, defect in a film is reduced by diluting SiH4 gas with hydrogen. Photo conductivity of the a-Si:O:N:H film ((1) in the figure) of hydrogen dilution degree of 20 is approximately doubled at the same optical band gap range of 1.95 to 2.25 eV. |
