LED BONDING METHOD OF SEMICONDUCTOR

摘要

The lead bonding method comprises the following steps; (a) doping gold on the pad (1) of a chip (1); (b) doping tungsten and titanium on the gold; (c) forming an metal-bump layer on the tungsten layer; and (d) performing lead bonding between the metal-bump layer and the chip (1). The method provides advantages which it can take multiple bonding and improve the yield rate of the bonded chips.