发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus includes a filament mounted in an electron generation chamber for producing plasma of a discharge gas, thereby generating electrons. The electrons are supplied from the electron generation chamber into an ion generation chamber through electron passage hole between both chambers to produce plasma of a processing gas inside the ion generation chamber. The chambers are formed of conductive ceramics to constitute electrodes.
申请公布号 US5252892(A) 申请公布日期 1993.10.12
申请号 US19910786009 申请日期 1991.10.31
申请人 TOKYO ELECTRON LIMITED 发明人 KOSHIISHI, AKIRA;KAWAMURA, KOHEI;MATSUDO, MASAHIKO;TAKAYAMA, NAOKI
分类号 H01J27/20;H01J37/32;H05H1/24;(IPC1-7):H05H1/02 主分类号 H01J27/20
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