发明名称 |
Plasma processing apparatus |
摘要 |
A plasma processing apparatus includes a filament mounted in an electron generation chamber for producing plasma of a discharge gas, thereby generating electrons. The electrons are supplied from the electron generation chamber into an ion generation chamber through electron passage hole between both chambers to produce plasma of a processing gas inside the ion generation chamber. The chambers are formed of conductive ceramics to constitute electrodes.
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申请公布号 |
US5252892(A) |
申请公布日期 |
1993.10.12 |
申请号 |
US19910786009 |
申请日期 |
1991.10.31 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOSHIISHI, AKIRA;KAWAMURA, KOHEI;MATSUDO, MASAHIKO;TAKAYAMA, NAOKI |
分类号 |
H01J27/20;H01J37/32;H05H1/24;(IPC1-7):H05H1/02 |
主分类号 |
H01J27/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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