| 摘要 |
PURPOSE:To provide a packaging structure of an FET for SHF band low noise amplification of simple structure and low manufacturing cost which can restrain dielectric loss low. CONSTITUTION:When a semiconductor pellet 2 including an FET for SHF band low noise amplification is packaged by resin mold such as resin, at least a signal propagation path part among an outer lead 3, a bonding wire 4 and a pellet 2 is coated with resin mold 5 containing bubbles. An outside of the resin mold 5 containing bubbles is further coated with airtight resin mold 6. Since proximity of the signal propagation path is thereby enclosed with bubbles whose dielectric constant is locally low, electrostatic capacity is reduced and dielectric loss in signal propagation is restrained low.
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