发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To solve problems such as shape abnormality due to deterioration of plating solution, short-circuit between patterns due to cracks of a plating mask, re-attachment of etching material in the case of etching a current path at the time of electroplating, and side etching, when wiring is formed by a plating process. CONSTITUTION:Firstly aluminum 4 is etched by using a photo resist pattern 5. Successively a pattern of plating gold 6 is formed by using the patterned aluminum 4 as a mask for plating.
申请公布号 JPH05109728(A) 申请公布日期 1993.04.30
申请号 JP19910267413 申请日期 1991.10.16
申请人 NEC CORP 发明人 YAMAMOTO TOMIO
分类号 C25D3/48;H01L21/28;H01L21/288;H01L21/3205;H01L23/52 主分类号 C25D3/48
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