| 摘要 |
<p>PURPOSE:To provide the process for production of the phase shift mask which enhances the adhesion between a chromium mask surface and a resist and decreases the intra-surface fluctuations in the sizes of phase shifters and the fluctuations among substrates. CONSTITUTION:The chromium 2 surface of the chromium mask before application of the resist 3 is irradiated with far UV light (DUV light) 11, by which the org. matter and particles on the chromium film 2 surface are removed. Further, the mask is preserved in an inert gas 12 after the irradiation with the far UV rays taking time before the resist application to maintain the clean surface state right after the irradiation, by which the adhesion of the chromium mask and the resist 3 is enhanced and the reflection plate 44 having the decreased intra-surface fluctuations in the sizes of the phase shifters and fluctuations among the substrates is produced.</p> |
