发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To obtain the positive type composition superior in sensitivity and resolution, capable of forming a resist pattern high in heat resistance, wide in a focusable margin, and used especially favorably in the field of manufacture of semiconductor elements. CONSTITUTION:The positive type composition comprises a compound having a quinonediazido group and an alkali-soluble resin obtained by polycondensing a phenol mixture of 25-45 weight % m-cresol, 41-60 weight % p-cresol and 10-30 weight % 1,3-xylenol with a aldehyde mixture of formaldehyde and p- hydroxybenzaldehyde and o-hydroxybenzaldehyde.
申请公布号 JPH0561195(A) 申请公布日期 1993.03.12
申请号 JP19910246524 申请日期 1991.09.02
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TOKUTAKE NOBUO;TAKAHASHI KOICHI;DOI KOSUKE;NIIKURA SATOSHI;OBARA HIDEKATSU;NAKAYAMA TOSHIMASA
分类号 G03F7/022;G03F7/023;H01L21/027 主分类号 G03F7/022
代理机构 代理人
主权项
地址