| 摘要 |
PURPOSE:To grow an AlGaAs layer or an AlGaInP layer transparent to light emitting wavelength on the surface of an upper clad layer without oxidizing the upper clad layer and, what is more, without allowing P atoms to leave therefrom. CONSTITUTION:There are consecutively grown a lower clad layer 2, an active layer 3, an upper clad layer 4, an oxidation preventive layer 5, an etching stop layer 6 and a current inhibiting layer 7 on a substrate, 1. Then, a light emitting section with a specified size is opened so that the surface may be covered with a mask. The current inhibiting layer 7 is etched with NH4OH:10H2O2 while the etching stop layer 6 is etched with concentrated hydrochloric acid (conc. HC1) so as to expose the oxidation preventive layer 5. After mask removal, it is placed in an MBE or MOCVD and heated and vaporized until the upper clad layer 4 may be exposed on the oxidation preventive layer 5. At the same time with the exposure, a transparent regrowth layer 8 and a gap layer 9 are grown for the light emitting wavelength. |
