| 摘要 |
PURPOSE:To minimize the stress in a double-hetero junction semiconductor laser element for restraining the deterioration of it by employing GaAlAs to form the active layer to constitute the element and specifying the mixed-crystal ratios of the active layer and the weir layers sandwiching said layer. CONSTITUTION:On a GaAs substrate to constitute a double-hetero junction semiconductor laser element, a first AlGaAs weir layer is grown, on which an AlGaAs active layer is provided, and on this the second AlGaAs weir layer is formed. Then, on this the third AlGaAs weir layer is grown, which is coated with a contact layer. In the constitution, the mixed-crystal ratio of the active layer is specified: 0.02- 0.025, and the mixed-crystal ratio of the first and second weir layers sandwiching the active layer:0.3-0.35. This permits the stress produced in the laser element to be minimized, so that its life is greatly prolonged. |
