MANUFACTURE OF DIELECTRIC THIN FILM

摘要

PURPOSE:To form a high-performance dielectric thin film which is provided with both of a high dielectric feature and a low leak current by accelerating ions including at least a titanium element for injecting them into a silicon thin film and by thermal-oxidizing the silicon thin film in an atmosphere including an oxygen element. CONSTITUTION:A Ti element is accelerated and injected into polycrystalline silicon 11 which also serves as an electrode to form an SiTi layer. Then, the substrate is heat-treated in an oxygen atmosphere at 200-1000 deg.C or around to form an SiTiO layer 12. At that time, care should be taken so that an Sin.; layer 13 which Ti does not reach may be formed near an interface between the polycrystalline silicon, a base, and the SiTiO layer. The SiTiO layer 12 and SiO2 layer 13 is used as a dielectric thin film 15. By this method, a dielectric thin film which is provided with not only a high dielectric feature but also a low leak current can be obtained efficiently and rationally.